“Manipulation of atomic defect and interlayer configuration
in hexagonal boron nitride heterostructures”

Dr. Young Duck Kim
Department of Physics, Kyung Hee University

Oct. 29 (Fri.), 04:00 PM
https://kaist.zoom.us/j/85881284991
회의 ID: 858 8128 4991
암호: 884772

Abstract:
Two-dimensional (2D) van der Waals materials including graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDCs) have great potential for exploring the exotic quantum behaviors and realization of advanced optoelectronics devices. After the discovery of the strongly correlated insulating behavior and superconductivity from magic angel twisted graphene, van der Waals homo/hetero-structures become the most important platform for the realization of the tunable quantum materials. Furthermore, manipulation of the Moire superlattice, interlayer configuration, atomic defects in van der Waals materials provide the degree of freedom for control of physical properties. In this talk, I will focus on the atomically thin hBN, which is an ultra-wide semiconductor (> 6.4 ev). I will present the manipulation of atomic defects, which are created by the in-situ local electric field in hBN heterostructures and their atomic structure by probing the electroluminescence from hBN. Furthermore, I will also discuss the control of the interlayer configuration of hBN and their corresponding optical properties in the deep ultraviolet range. This demonstration will pave the way for the development of hBN based deterministic quantum emitters and efficient deep UV light sources.