“Spin-orbit torque-based spintronic devices”

Dr. Byong-Guk Park
Materials Science and Engineering, KAIST

Sep. 30 (Fri.), 04:00 PM
E6-2. 1st fl. #1323
https://kaist.zoom.us/j/83179561572
회의 ID: 831 7956 1572
암호: 216531

Abstract:
Spin-orbit torque (SOT) arising from spin-orbit coupling has gained much attention because it promises efficient magnetization switching in spintronic devices [1]. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is required to achieve deterministic switching, and this is detrimental for device applications. Therefore, it is of crucial importance to find a way of field-free SOT switching of perpendicular magnetization along with reducing the switching current density for the widespread application of SOT technology.
In this talk, I first present various SOT materials which efficiently generated spin currents and associated SOTs to reduce field-free switching current [2]. Then, I will also show SOT-based spintronic devices such as MRAM-based process-in-memory [3] and physically unclonable functions (PUF) [4].

[1] J. Ryu, et al, Adv, Mater. 32, 1907148 (2020)
[2] S.C. Baek, et al. Nat. Mater. 17, 509 (2018), J. Ryu, et al, Nat. Electron. 5, 217 (2022)
[3] M.-G. Kang, Nat. Commun. 12, 7111 (2021)
[4] S. Lee, et al. Adv, Mater. (in press)